? 2000 ixys all rights reserved isolated backside* symbol test conditions maximum ratings v dss t j = 25 c to 150 c 150 v v dgr t j = 25 c to 150 c; r gs = 1 m 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c75a i dm t c = 25 c, note 1 320 a i ar t c = 25 c80a e ar t c = 25 c45mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 310 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ weight 5 g isoplus 247 tm hiperfet tm power mosfets isoplus247 tm (electrically isolated backside) n-channel enhancement mode avalanche rated, low q g ,high dv/dt features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low drain to tab capacitance(<30pf) low r ds (on) hdmos tm process rugged polysilicon gate cell structure rated for unclamped inductive load switching (uis) fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control advantages easy assembly space savings high power density g = gate d = drain s = source * patent pending symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. a
i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c 25 a v gs = 0 v t j = 125 c1 ma r ds(on) v gs = 10 v, i d = i t 22.5 m notes 2, 3 advanced technical information 98750 (10/00) ixfr 80n15q v dss = 150 v i d25 =75a r ds(on) = 22.5 m t rr 200ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t notes 2, 3 35 50 s c iss 4600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1400 pf c rss 680 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 55 ns t d(off) r g = 2 (external), notes 2, 3 68 ns t f 20 ns q g(on) 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 39 nc notes 2, 3 q gd 85 nc r thjc 0.40 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 80 a i sm repetitive; note 1 320 a v sd i f = i s , v gs = 0 v, notes 2, 3 1.5 v t rr 200 ns q rm 1.2 c i rm 10 a i f = 50a,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % 3. i t = 40a dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) isoplus 247 tm outline ixfr 80n15q
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